Rutherford backscattering/channeling technique has been used to investigate the lattice damage caused by 1MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices and GaAs at elevated substrate temperature and room temperature for different doses. For elevated substrate temperature irradiation, a dose range for balance between defect production and dynamic annealing, and a critical dose for unbalance between them are observed for both Al0.3Ga0.7As/GaAs superlattices and GaAs. The superlattices are more difficult to be damaged than GaAs, and the critical dose for the former is also larger than that for the latter. The hot spot and knock-on model is used to interpret the temperature and dose dependence of damage accumulation in the two materials. The ralative bona strength in GaAs and ＡｌxＧａ1-xAs are calculated using CNDO/2 quantum chemistry method to explain the differences of damage accumulation in Al0.3Ga0.7As/GaAs superlattices and GaAs.