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中国物理学会期刊

BaSn1-xSbxO3-δ和Ba1-yLaySnO3-δ的导电机制

CSTR: 32037.14.aps.43.1840

MECHANISM OF CONDUCTION IN BaSn1-xSbxO3-δ AND Ba1-yLaySnO3-δ

CSTR: 32037.14.aps.43.1840
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  • 测量了BaSn1-xSbxO3-δ和Ba1-yLaySnO3-δ样品的低温电阻率和磁化率.实验结果表明,在较低温度区域,两类样品的导电机制均是传导电子的范围可变跳跃。而在较高温度区域,BaSn1-xSbxO3-δ样品的电导主要是电子从定域态到扩展态的跃迁所贡献,Ba1-yLaySnO3-δ样品的电导则可能来源于电子的最近邻跳跃。

     

    The temperature dependence of resistivity and magnetic susceptibility was measured for both BaSn1-xSbxO3-δ and Ba1-yLaySnO3-δ systems below room temperature. The results show that the mechanism of conduction is the variable range hopping for both systems at lower temperature. Whereas the two types of mechanism of conduction at higher temperature, are considered the nearest-neighbor hopping (Ba1-yLaySnO3-δ)and as the excitation of electrons to the conduction band (BaSn1-xSbxO3-δ)

     

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