-
利用了自旋1/2二维Ising模型及其“不等式方法”,确定了三元Ⅲ─V半导体会金(001)面外延生长中的二维平面基态有序结构和基态相图,并通过层状叠加得到了合金中可能出现的长程有序结构,较好地说明了实验发现的(001)衬底外延生长中的长程有序现象.Two-dimensional spin 1/2 Ising model and the "inequality method" are used to determine the planar ground-state structures and ground-state phase diagram of ternary III-V semiconductor alloys. Long-range ordered structures in epitaxial growth are deduced according to layer-by-layer stacking. Some experimental long-range ordered features on (001)substrate growth are explained.







下载: