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利用直拉硅单晶中氧化物沉淀的生长,选择两步热处理制度,验证了Ham有关扩散控制沉淀生长理论。并尝试应用Ham理论对氧化物沉淀的形核进行处理。Hanis theory of precipitate growth controlled by diffusion is demonstrated by studying the growth of the oxygen precipitates at high temperature with two-step heat treatment. And the nucleation of the oxygen precipitates is disussed according to Ham's theory tantatively.







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