The typical Raman spectrum from light-emitting porous silicon shows a sharp peak near 520cm－１. The peak wavenumber decreases with the increase of porosity. The lineshape analysis shows that both phonon confinment and strain effects in nanocrystal silicon must be taken into account for the measured Raman spectra. The strain in porous silicon film is estimated and the result is consistent with that given by X-ray diffraction studies. No light scattering from amorphous phase is observed.