The deep levels of Ga０．４７Ｉｎ０．５３As/InP lasers with broad, proton-bombarded stripe contacts and SQW (Single Quantum Well) grown by LP一MOVPE have been studied using DLTS (Deep Level Transient Spectroscopy) technique. DLTS Spectra of samples show that hole traps H1(Eｖ+0.09eV) and H2(Eｖ+O.11eV) and electron traps El (Eｖ-0.35eV) and E2 (Eｖ-0.42eV) present in Ga０．４７Ｉｎ０．５３As layer of lasers with broad and proton-bombarded stripe contacts, respectively. These traps may be related to Zn introduction in Ga０．４７Ｉｎ０．５３ As layer, native defect and interactions between H1 and damage induced by proton-bombardment, respectively. They may spatially localize in Ga０．４７Ｉｎ０．５３As layer and interface regions of discontinous variation In mole fraction of Ga1-xInx As layer with XIn=0.53.