The deep levels of n-Si/n+一Si interface and near the interface in the n-Si have been studies using spread resistance probe (SRP) and deep level transient spectroscopy (DLTS) techniques in silicon direct bonding. The experimental results show that a dominant electron trap, having energy level position of Eｃ－0.39eV and concentration in the range of l013－１０14ｃｍ-3, was observed. This trap is strongly related to vacancies of n-Si/n+-Si interface and near the interface in the n-Si induced by high temperature(1000一11000C) treatment in SDB processing.