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CuPc　LB膜与InP接触界面电荷态对Raman光谱的影响

物理学报, 1994, 43(5): 809-815.
DOI: 10.7498/aps.43.809
CSTR: 32037.14.aps.43.809

EFFECTS OF THE HIGH DENSITY CHARGED DEFECT STATES AT THE CuPc/InP INTERFACE ON RAMAN SCATTERING OF CuPc LB FILM

Acta Phys. Sin., 1994, 43(5): 809-815.
DOI: 10.7498/aps.43.809
CSTR: 32037.14.aps.43.809
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  • 摘要

    报道Ｃｕｐｃ／ＩｎＰ异质结的整流（Ｊ－Ｖ）特性和电容电压（Ｃ－Ｖ）特性，并研究了界面态对ＣｕＰｃＬＢ膜Ｒａｍａｎ光谱的影响。

     

    Abstract

    The characteristics of current density-voltage (J一V) and capacitance-voltage of CuPc/InP rectifying heterojunction energy barrier is measured, and that the effects of density of states at CuPc/InP interface on Raman scattering of CuPc LB film are studied.

     

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