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用电弧炉熔炼方法制备了Sm2Fe17-xMxC1.5(M=Ga,Si)化合物,研究了它们的形成、结构与磁性。实验结果表明,用Ga替代Fe,当2≤x≤6时,可形成Th2Zn17型单相化合物,而Si的替代仅在x=2时为单相结构。居里温度随Ga含量的增加从x=2时的633K下降到x=6时的351K,Sm2Fe15Si2Formation, structure and magnetic properties of Sm2Fe17-xMxC1.5(M=Ga,Si) compounds prepared by arc-melting were studied. The Sm2Fe17-xGaxC1.5(3≤x≤6) carbides crystallize in the rhombohedral Th2Zn17-type structure and the single-phase compund of Sm2Fe17-xSixC1.5 can only be obtained as x is 2. It is found that the Curie temperature of Sm2Fe17-xGaxC1.5 compounds decreases monotonically with increasing Ga concentration x from 633K for x=2 to 351K for x=6,and the Tc of Sm2Fe15Si2C1.5 compound is 578K. All compounds studied in this work exhibit an easy c-axis anisotropy at room temperature. The anisotropy field of Sm2Fe14Ga3C1.5 and Sm2Fe15Si2C1.5 compounds is found td be 90 and 115 kOe, respectively. A room-temperature coercivity of 16 kOe is obtained in rapidly quenched Sm2Fe15Si2C1.5 alloy prepared at。speed of 25 m/s.







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