In this paper, it is reported that the nickel ions (140 keV, 5×1015-2×1017ions/cm2) were implanted at room temperature into the specimens of yttria which were partially stabilized by zirconi-a. The annealing processes were decided . By making use of electric measurement, Rutherford back scattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, we have studied the effects of implantation and annealing on the electrical properties of the surface and the structure of implanted layer of polycrystalline ZrO2.