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中国物理学会期刊

La掺杂BaTiO3陶瓷的介电性与缺陷

CSTR: 32037.14.aps.45.1220

THE DIELECTRIC PROPERTY AND DEFECTS OF La-DOPED BaTiO3 CERAMICS

CSTR: 32037.14.aps.45.1220
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  • La掺杂BaTiO3陶瓷的介电常数在0.40at%La含量内随掺La量呈现倒U型变化,在1kHz内随频率增加急剧减小,之后随频率变化缓慢,介电性的这些变化起因于掺La引起的如下缺陷变化:独立的Ba空位( V″Ba→(LaBa·V″Ba)型复合缺陷→(LaBa·V″Ba·LaBa型复合缺陷型复合缺陷。

     

    The dielectric permittivity of La-doped BaTiO3 ceramics exhibits reverse U-shape variation with increasing La-content in the range of 0.4 at% La, and with increasing frequency f it decreases quickly for f≤1000 Hz and changes very slowly for f>1000 Hz. These variations of dielectric property result from variation of defects due to doping La as follows: isolated Ba-vacancy ( V″Ba)→ associated defect (LaBa·V″Ba)→(LaBa·V″Ba·LaBa).

     

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