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中国物理学会期刊

经验赝势法在GaAs/Ge,AlAs/GaAs和AlAs/Ge异质结能带排列理论计算中的应用

CSTR: 32037.14.aps.45.1536

THE APPLICATION OF EMPIRICAL PSEUDOPOTENTIAL SCHEME ON THE THEORETICAL CALCULATION OF HETEROJUNCTION BAND ALIGNMENT

CSTR: 32037.14.aps.45.1536
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  • 在异质结能带排列的理论计算中,采用经验赝势能带计算方法,并将平均键能Em作为参考能级,计算了GaAs/Ge,AlAs/GaAs和AlAs/Ge三种异质结的整体能带结构和排序(包括价带、导带和带隙),获得完整且较准确的理论计算结果,其价带偏移ΔEv的计算值分别为0.57,0.50和1.07eV.

     

    Taking the average bond energy Em as reference level, and empitical pseudopotential scheme is employed to calculate the band alignment(including valence band, conduction band, and band gap) of three semiconductor heterojunctions:GaAs/Ge,AlAs/GaAs and AlAs/Ge and the complete and more accurate calculation results are obtained. In our calculation, the valence -band offset values ΔEv of the above three heterojunctions are 0.57,0.50 and 1.07eV,respectively.

     

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