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中国物理学会期刊

(Ba_(1-x)K_x)BiO_3电子结构与超导电性

CSTR: 32037.14.aps.45.1737

THE ELECTRONIC STRUCTURE AND SUPERCONDUCTIVITY FOR (Ba1-xKx)BiO3

CSTR: 32037.14.aps.45.1737
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  • 用第一原理的LDF-LMTO-ASA超元胞法,模拟由X射线吸收谱精细结构测定的BaBiO3中,Bi有两种价态Bi3+和Bi5+及与之相应的两种不同键长的Bi—O八面体,以及K掺杂对晶体结构的影响.计算了Ba4Bi4O12,(Ba3K)Bi4O12,(BaK)Bi2O6,(BaK3)Bi4O12,K2Bi2O6(简记为(404),(314),(112),(134),(022))五种“样本”的电子结构.结果表明,(404)和(314)分别为Eg=1.6eV及Eg=1.5eV的半导体,其它“样本”为金属.总能的分析表明(134)是不稳定的,故溶解极限为x=0.5.以“取样”方式按伯努利分布确定任意组分各“样本”的概率,进而计算了(Ba1-xKx)BiO3电子结构随组分的变化.最后用逾渗模型说明了超导转变温度Tc在x=0.25附近的突变

     

    Electronic structure for BKB has been calculated by using LMTO-ASA-Supercell method based on the X-ray absorption fine structure (XAFS) spectroscopy measurements. Measurements show that Bi posseses two valence states Bi3+ and Bi5+ and their Bi—O bond lengths are diffferent, the difference decreases with the increase of K concentration. Calculations are performed on five samples namely Ba4Bi4O12(404),(Ba3K)Bi4O12(314),(BaK)Bi2O6(112),(BaK3)Bi4O12(134),K2Bi2O6(022).Results from the calculations show that (404)and (314)are semiconductors with gaps of 1.6eV and 1.5eV, respectively. Other samples are metals. Total energy analysis shows that (314) is not stable, so that the extreme value of x is 0.5. The BKB electronic structures at x=0.1 to 0.5 are calculated by combining the probability with sample's Bernoull's distribution. Superconducting transition temperature Tc of BKB is suddenly changed when x approximates to 0.25. The experimental data are close to the prediction values of percolation theory.

     

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