Raman scattering of Ge nanocrystallites from 4 to 16nm is size, embedded in ＳｉＯ２ thin films has been studied. The Ge-ＳｉＯ２ samples were prepared by ion-beam sputtering and a post-annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge-nanocrystallites on Raman spectra have also been investigated.