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中国物理学会期刊

纳米硅集团表面电子态的理论研究

CSTR: 32037.14.aps.45.1890

A THEORETICAL STUDY ON THE SURFACE ELECTRONIC STRUCTURES OF Si NANO-CLUSTERS

CSTR: 32037.14.aps.45.1890
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  • 研究—H,—O或—OH基吸附于表面的纳米硅集团电子结构的变化情况.选取了几种可能的吸附构型,用定域密度泛函(LDF)-集团模型数值自洽求解方法的第一性原理计算,求得优化的吸附位置、相应的电子结构,并分析了有关的光学性质.在全氢饱和的情况下,能隙比硅体的宽,呈明显的量子尺寸效应;部分—H被—O原子取代后,在禁带中出现一些“尾态”,这些态部分被占有;若以—OH基取代—O,则相应的空尾态被占有,但带隙变化不大.—O和—OH吸附时均不呈现明显的量子尺寸效应

     

    The electronic structures of H,O and OH chemisorbed on Si nano-clusters were calculated with local density functional formalism. Atomic force calculations were used to reach at an optimized chemisorption site for the adsorbates. Different models were used. For all H adsorbed clusters, wider energy gaps are opened up compared with that of bulk Si, and quantum size effect is obviously shown. When a shell of the adsorbed H atoms is replaced by oxygen atoms, oxygen induced tail states appear in the gap. Both occupied and unoccupied states exist, and the gap is reduced from that in all H-terminated cases. For O atoms replaced by OH, the tail states become all occupied, but the gap widths do not differ much. No quantum size effects are observable for both O and OH adsorption.

     

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