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中国物理学会期刊

一维随机成核生长模型

CSTR: 32037.14.aps.45.1960

ONE-DIMENSIONAL RANDOM SUCCESSIVE NUCLEATION GROWTH MODEL

CSTR: 32037.14.aps.45.1960
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  • 建立了一种一维随机成核生长模型,在三种不同的近邻条件下进行模拟,得到了一系列聚集生长图形,并计算了相应的分形维数.所得图形与多孔硅形成图样相似.对分形维数D随生长概率X变化的D-X曲线性质以及分形结构转变为均匀结构的临界阈值等作了初步的讨论

     

    A computer simulation model of one-dimensional random successive nucleation growth is presented. A series of patterns and their fractal dimensions are obtained for three near-neighbor conditions. The simulated structures are similar to those of porous silicon. The properties of the D-X curve and the critical threshold of the cluster change from fractal to uniform structure are also discussed briefly.

     

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