The room-temperature photoluminescence (PL) spectrum of the modulation-doped strained In0.60Ga0.40As/In0.52Al0.48As multiple quantum wells (MQW) is reported. In addition to two strong PL peaks related to the recombination between electrons in the first (n = 1), second ( n = 2) subbands and heavy holes in the first ( n = 1) subband, a weak PL shoulder related to the recombination between n = 1 electrons and n = 1 light holes is obsevered at low temperatures. We demonstrate that the main mechanism of the decrease in radiative QW recombination efficiency is due to the carrier trapping on the misfit dislocations, based on the temperature and excitation power dependence of the PL peak intensity and energy and the steady-state PL model.