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中国物理学会期刊

铁氧化物中电子隧道现象的扫描隧道显微术研究

CSTR: 32037.14.aps.45.506

EECTRON TUNNELING PHENOMENA IN IRON OXIDES STUDIED WITH SCANNING TUNNELING MICROSCOPY AT 4. 2K

CSTR: 32037.14.aps.45.506
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  • 报道了利用扫描隧道显微术(STM)对金属表面氧化物层进行电子隧道谱研究的结果。在对两类铁晶体表面氧化层进行的隧道谱和势垒高度测量结果进行分析后表明,常温条件下形成的氧化层(Ⅰ类)应主要是Fe3O4;而在高温氧化条件下形成的表面层(Ⅱ类)的主要成分则应是Fe2O3。从而表明(STM)可用于研究铁表面氧化过程的不同阶段,并且由Ⅰ类氧化层的低势垒特性说明STM还可以用于观测此类氧化层的内部结构。类似研究方法还可应用到对一系列

     

    We have used STM to investigate the electron tunneling spectroscopy, as well as the tunneling barrier heights,in two kinds of iron oxides prepared differently on iron single crystal surfaces. The experimental results agree reasonably well with that of calculation employing stationary state tunneling method, and show that the iron oxide formed under ambient temperature (type Ⅰ) is mainly consisted of Fe3O4, while the surface processed by flash oxidation (type Ⅱ) should be consisted of high barrier oxides, most likely Fe2O3. Therefore, STM could be used to study various stages of surface oxidation on iron single crystal surfaces. The results aslo indicate that STM could be applied to study a range of metal oxides, and it is possible to investigate the internal structures of certain metal oxides possessing low barrier heights characteristics.

     

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