The Hg1-xCdxTe films were prepared by a dipping liquid phase epitaxy technique on spherical CdTe substrate with several different misoriented facets. They were characterized by means of micrograph,infrared absorption spectra, Raman scattering, and X ray double crystal diffraction. The results show that-near facet (δ<1°) and terrace free (δ≈1.2 °) growth modes are superior in both the planarity and the amount of precipitates.