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中国物理学会期刊

金属与金刚石薄膜接触的电学特性研究

CSTR: 32037.14.aps.46.1188

ELECTRICAL CHARACTERISTICS OF METAL CONTACTS ON DIAMOND FILMS

CSTR: 32037.14.aps.46.1188
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  • 用热丝辅助化学汽相沉积技术在Si衬底上合成了含少量受主型杂质的近于本征的金刚石薄膜,并研究了三种金属(Cu,Ag和Al)与它接触的电学特性,以及退火对接触特性的影响.结果表明Cu,Ag与金刚石薄膜接触的电学特性比较类似,而Al则明显不同;而且退火对它们的接触特性影响很大

     

    The polycrystalline diamond films were synthesized by thermal filament chemical vapor deposition technique. The electrical characteristics of contacts between metal and diamond film and the effect of annealing have been investigated. Experimental results showed that the electrical characteristics of Cu contact on diamond film is similar to that of Ag,but different from that of Al. In addition,annealing has a great effect on the contact electrical characteristics.

     

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