We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si∶H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500nm to 850nm with two peaks located at about 630—680nm and 730nm respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural- characteristics, and a tentative explanation of the light emission mechanism is proposed.