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中国物理学会期刊

非晶金刚石薄膜的场致电子发射性能研究

CSTR: 32037.14.aps.46.1444

FIELD EMISSION FROM AMORPHOUS DIAMOND FILMS

CSTR: 32037.14.aps.46.1444
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  • 利用真空磁过滤弧沉积技术制备出一种高sp3含量的非晶碳膜———非晶金刚石薄膜,并对这种非晶金刚石薄膜的场电子发射特性及其发射机理进行了研究.实验结果表明,在阈值电场低于20V/μm情况下,得到的场发射电流达20—40μA,薄膜的电子发射行为符合Fowler-Nordheim场发射理论.研究表明,这种非晶金刚石薄膜具有负的电子亲合势和较小的有效功函数以及相对较低的禁带宽度

     

    One new diamond form,the amorphous diamond (a-D) film,is prepared by filtered arc deposition.The field emission properties and mechanism of a-D film are presented,to our knowledge,for the first time.The field emission current of more than 20μA is detected below a field intensity of 20V/μm. This result is even superior to all previously reported results.The Fowler-Nordheim field- emission behavior has been observed in a-D films.The a-D films have a low work function and negative- electron affinity.

     

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