High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700℃ in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer.Good ferroelectric properties were obtained from the thin films;the remnant polarization and coercive field were about 10μC/cm2 and 57kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles.Leakage current and the dc breakdown field measurement were about 4×10-8A/cm2 at 5V and 250kV/cm,respectively.