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中国物理学会期刊

由Pb过量引起的镧钛酸铅铁电薄膜性能异常的研究

CSTR: 32037.14.aps.46.1849

A STUDY OF ABNORMAL ELECTRIC PROPERTIES OF LEAD LANTHANUM TITANATE THIN FILMS CAUSED BY EXCESS PbO

CSTR: 32037.14.aps.46.1849
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  • 采用金属有机物热分解法制备了不同La含量和不同Pb过量的镧钛酸铅铁电薄膜.在研究铁电性时发现:薄膜样品在极化达到饱和之前,电滞回线会出现束腰现象,束腰现象只与薄膜中的Pb过量有关.随Pb过量的增加和La含量的减少,镧钛酸铅薄膜电滞回线的束腰程度加剧.在C-V特性测试中发现:在Pb过量的样品中,C-V曲线会出现异常的四峰现象,随偏压升高或频率增大,异常程度逐渐减弱甚至会转变成正常的双峰.进一步研究表明:这两种实验现象是统一的,可以用铁电薄膜电畴的钉扎效应解释.由于Pb过量使正常的钙钛矿薄膜中出现了多余的Pb

     

    Lead lanthanum titanate(PLT) thin films with excess PbO were prepared by metal organic decomposition (MOD) process.The C-V characteristics and ferroelectric properties of the PLT films were investigated as functions of amount of excess PbO.The normal P-E hysteresis loops and butterfly shape C-V curves were obtained for the PLT films with stoichiometric composition.While abnormal ferroelectric and C-V properties were observed in the PLT films with excess PbO.The P-E hysteresis loops were pinched before the polarization of the films reached the saturation.Instead of two peaks (butterfly-shape) in the normal C-V curves,the C-V curves had four peaks. The abnormal behavior of the hysteresis loops and C-V curves became more serious with increasing amount of excess PbO in the films.The results can be explained by the ferroelectric pinning effect.A part of excess PbO may be accumulated at boundaries of crystalline grains and clusters and the interface between the bottom electrode and the film during the annealing process of the films.PbO may act as the pinning centers and has a strong effect on the ferroelectric domains.If the biased voltage is not large enough,then part of the electric domains cannot overcome the force of the pinning,and abnormal ferroelectric and C-V properties will be observed.Excess PbO may be one of the main causes of fatigue and aging of ferroelectric thin films.

     

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