In this paper,dielectronic recombination process is proposed as two independent processes resonant capture(inverse Auger) process and radiative decay process,which can be used- conveniently in the varied plasmas environments.Through the quantum defect theory,a simplified- analytical formula is introduced to calculate the Auger rate and the theoretical results have been- compared with a simplified relativistical configuration interaction calculation.Finally,a method for- applying the formula to the average atom model is given.