搜索

x
中国物理学会期刊

Al表面的多层弛豫——修正嵌入原子势的应用

CSTR: 32037.14.aps.46.2198

MULTILAYER RELAXATION OF Al SURFACE APPLICATION OF THE MODIFIED EMBEDDED ATOM POTENTIALS

CSTR: 32037.14.aps.46.2198
PDF
导出引用
  • 利用修正的嵌入原子方法计算了Al低指数面(100),(110),(111)和高指数面(210),(211),(310),(311),(331)的多层弛豫,所得到的结果都与实验及第一原理计算结果符合得很好.尤其是这种半经验方法给出了与实验结果相符的Al(100)和(111)表面最外层向外膨胀的理论结果,并提出这种膨胀主要是由于最外层与第二层的键中s态电子增加而p态电子减少引起的.

     

    The multilayer relaxation of Al(100),(110),(111) and (210),(211),(310),(311) and (331) surfaces is calculated using the modified embedded atom method. The results are in good agreement with the experimental data and first-principle calculations. Especially, the results for Al(100) and (111), which show “anomalous” behaviors in surface relaxation, that is both exhibit- expansions between the first two layers, are consistent with the experimental data. It is suggested- that these expansions are mainly due to the increase of electronic s state and the decrease of p state in the bonds between the first two layers.

     

    目录

    /

    返回文章
    返回