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外延Si1-xGex薄层中浅杂质的光热电离光谱

物理学报, 1997, 46(2): 370-374.
DOI: 10.7498/aps.46.370
CSTR: 32037.14.aps.46.370

PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER

Acta Phys. Sin., 1997, 46(2): 370-374.
DOI: 10.7498/aps.46.370
CSTR: 32037.14.aps.46.370
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  • 摘要

    在Si1-xGex合金外延层中利用光热电离光谱方法观察到了Si0.92Ge0.08合金中浅施主磷的2p±及3p±态的分立谱线，并根据有效质量近似理论估算了Si0.92Ge0.08合金中磷施主的电离能为45.51meV．与硅相比，由于合金的无序效应，Si1-xGex合金的分立谱线发生明显展宽

     

    Abstract

    The 2p± and 3p± excited lines of P donors in Si0.92Ge0.08 epitaxial layer have been observed using photothermal ionization spectroscopy.The ionization energy of P in Si0.92Ge0.08 is 45.51meV according to effective mass approach.The spectral lines of P in Si1-xGex compared with those in pure Si apparently broaden due to alloy disorder effect.

     

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