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中国物理学会期刊

金属颗粒-半导体膜Cu:CdS的制备及结构研究

CSTR: 32037.14.aps.46.878

THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL-SEMICONDUCTOR FILM Cu∶CdS

CSTR: 32037.14.aps.46.878
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  • 利用磁控溅射产生金属Cu团簇,同时蒸发半导体介质CdS,将Cu团簇包埋在CdS介质中,制备出金属颗粒半导体膜.团簇大小可通过改变溅射气压控制.用TEM研究了嵌埋团簇的结构.分析表明:CdS很好地包埋了Cu团簇,都呈多晶结构;团簇尺寸在5—20nm,Cu晶格发生了膨胀,膨胀量在7%左右

     

    By using magnetic controlled sputtering of-atoms and evaporating insulator medium, Cu clusters embedded in CdS, a metal-semiconductor film Cu∶CdS has been successfully prepared. TEM is used in studying the microstructure of Cu clusters embedded in the medium CdS. The copper cluster is well embedded in CdS. The size of the triangle-shaped grains, Cu clusters, is from 5nm to 20nm. The Cu cluster and medium CdS are both of polycrystalline structures. And the Cu cluster′s lattice constant expands by about 7%.

     

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