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中国物理学会期刊

赝形InxGa1-xAs/In0.52Al0.48As异质结构中二维电子气的回旋共振光谱研究

CSTR: 32037.14.aps.47.1018

STUDY ON CYCLOTRON RESONANCE SPECTRA OF TWO-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC InxGa1-xAs/In0.52Al0.48As HETEROJUNCTIONS

CSTR: 32037.14.aps.47.1018
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  • 采用回旋共振光谱方法,同时获得了具有较高电子气浓度的赝形In0.80Ga0.20As/In0.53Ga0.47As/In0.52Al0.48AsHEMT结构中最低两个子能带的费密面附近电子有效质量、 散射时间和迁移率.观察到该系统中能带非抛物性和波函数穿透所导致的电子回旋有效质量的显著增大效应,以及合金无序势和电离杂质散射所引起的电子散射时间和迁移率明显的子带依赖性.

     

    The electron effective masses, scattering time and mobilities near the Fermi level for the lowest two subbands of the two-dimensional electron gases in a pseudomorphic In0.80Ga0.20As/In0.53Ga0.47As/In0.52Al0.48AsHEMT structure are determined by fitting the cyclotron resonance spectra. The significant enhancement of the electron effective masses, resulting from the conduction band nonparabolicity and the wave function penetration, is observed. The evident subband dependencies of the electron scattering time and mobilities dominated by the alloy scattering and ionized impurities scattering are also discussed.

     

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