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中国物理学会期刊

掺铒硅发光的晶场分裂

CSTR: 32037.14.aps.47.1201

CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON

CSTR: 32037.14.aps.47.1201
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  • 测量了掺铒硅的高分辨光致发光光谱,得到9条铒发光分裂谱线.利用群对称理论指出9条谱线来自Er3+中4I13/2到4I15/2光跃迁在Td晶场下的分裂.Er3+的第一激发态4I13/2最低能量的两个Stark能级为Γ8,Γ6(能量递增),它们到基态4 

    Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.

     

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