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中国物理学会期刊

超薄膜外延生长的计算机模拟

CSTR: 32037.14.aps.47.1427

COMPUTER SIMULATION OF THE EPITAXY GROWTH IN ULTRA-THIN FILMS

CSTR: 32037.14.aps.47.1427
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  • 对超薄膜的生长过程进行了计算机模拟,得到与实验结果一致的团簇生长形貌及“台阶流动”结果,分析了邻晶面偏离角对成核密度等的影响,并计算了台阶流动的阈值及团簇的分形维数.

     

    The aggregation in ultra-thin films is simulated.The growth morphologies,such as the fractal growth of clusters and the “step-flow”,are obtained.The relation between the density of the clusters and the bias angle of vicinal surface is analyzed,and the threshold value of step-flow and the fractal dimensions of the clusters are also calculated.The simulation results are consistent with the experiments.

     

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