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中国物理学会期刊

激光二极管抽运Nd∶YVO4晶体1342nm和671nm激光器研究

CSTR: 32037.14.aps.47.1579

DIODE PUMPED Nd∶YVO4 LASER EMITTING AT 1342nm AND 671nm

CSTR: 32037.14.aps.47.1579
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  • 报道了激光二极管抽运的Nd∶YVO4晶体1342和671nm激光特性.1342nm激光最大输出功率为1.75W,光-光转换效率为32.1%,斜效率为43%.利用Ⅰ类非临界相位匹配LBO晶体腔内倍频,当输入抽运功率为6W时,获得功率为502mW的671nm激光输出,光-光转换效率超过8.3%;当671nm激光输出功率为400mW时,短期的不稳定度小于2%.

     

    We report here a diode pumped Nd∶YVO4 laser emitting at 1342 and 671nm.A maximum output power of 1.75W at 1342nm was obtained under an incident pump power of 5.45W,with an optical-to-optical conversion efficiency of up to 32.1%.With a type Ⅰ noncritically phase-matched LBO crystal as the intracavity frequency doubler,over 500mW of 671nm light was obtained at 6W of incident pump power,the optical-optical conversion efficiency being 8.3%.The output power fluctuates less than 5% while the temperature change of the LBO crystal oven was maintained ±0.5℃ at the phase-matched temperature.

     

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