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中国物理学会期刊

硅衬底的SrTiO3淀积膜的湿敏特性与机理研究

CSTR: 32037.14.aps.47.160

SENSITIVITY OF HUMIDITY AND ITS MECHANISM FOR SrTiO3 FILMS DEPOSITED ON SiO2/Si SUBSTRATE

CSTR: 32037.14.aps.47.160
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  • 对无定形多孔SrTiO3膜电导率随相对湿度的变化进行了理论模型分析.该模型也适用于其他多孔半导体陶瓷材料.实验样品用氩离子束镀膜技术在SiO2/Si衬底上淀积SrTiO3膜并制成平面型电阻结构.结果表明,在室温下,当相对湿度从12%变化至53%时,电流缓慢下降;而当相对湿度从53%变化至92%时,电流又显著上升,即在高湿度条件下具有良好的湿敏特性.电流及其在高湿条件下的上升率随测试频率而增大.吸附响应时间明显长于脱附时间.

     

    A new theoretical model for SrTiO3 physisorption and chemisorption has been developed to quantitatively analyze the effect of relative humidity on electrical conductivity of the amorphous porous SrTiO3 film.This model may also be applied to other type of porous semiconductor ceramics.In this paper,the SrTiO3 film is deposited on SiO2/Si substrate by using the argon-ion beam plating technique,and then formed a planar resistor structure on SrTiO3 film. The experimental results show that, at room temperature,the current decreases slowly when relative humidity changes from 12% to 53%, and then increases rapidly with the increase of relative humidity from 53% to 92%.The current and its rate of change increase with increasing test frequency.The response time of water adsorption is longer than desorption.

     

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