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中国物理学会期刊

YBa2Cu3O7-δ外延薄膜的有效钉扎势

CSTR: 32037.14.aps.47.1720

EFFECTIVE PINNING POTENTIAL IN EPITAXIAL YBa2Cu3O7-δ THIN FILM

CSTR: 32037.14.aps.47.1720
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  • 在0—7T磁场范围内,测量了不同测量电流密度下YBa2Cu3O7-δ外延薄膜的电阻温度关系.实验结果表明,临界温度以下,混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系,有效钉扎势的温度和磁场关系遵守U∝(1-T/Tc)H-α关系,其中α=0.63,与热激活磁通点阵位错运动模型相一致,表明样品具有2D涡旋性质.

     

    The temperature dependence of the resistivity of an epitaxial YBa2Cu3O7-δ thin film has been measured in various magnetic fields up to 7T applied parallel to the c-axis near Tc. The result shows that the resistivity below Tc can be well fitted by thermally activation flux motion. The current density dependence of the effective pinning potential follows a logarithmic law proposed by Zeldov et al. The temperature and magnetic field dependence of the effective pinning potential follows U(H,T)=U0(1-T/Tc)H-α, with α=0.63, showing 2D behavior, It is consistent with the plastic deformation model of the flux-line lattice at flux-line-lattice dislocations.

     

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