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中国物理学会期刊

C60薄膜的离子注入损伤研究

CSTR: 32037.14.aps.47.1923

ION RADIATION DAMAGE OF C60 FILMS

CSTR: 32037.14.aps.47.1923
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  • 在200 keV重离子加速器上,用120—360 keV的H,N,Ar和Mo离子注入C60薄膜.对注入后薄膜的拉曼谱进行了分析.结果表明,不同离子注入C60薄膜后,C60的1469 cm-1特征峰随注入剂量的增加均呈指数式下降,同时在1300—1700 cm-1范围出现非晶碳峰,并逐渐增强,最终完全非晶化.而且1469 cm-1拉曼峰的强度及C60薄膜完全非晶化所对应的剂量与注入离子的种类和能量有关.进一步的分析表明,C60分子的损伤主要是由注入离子的核能量转移所造成,与电子能量转移无关.H离子注入C60薄膜后,1469 cm-1处特征拉曼峰向短波方向非对称展宽,这可能是注入的H离子通过电子能量转移使C60分子发生聚合的结果.

     

    The C60 films have been implanted with 120—360 keV H,N, Ar and Mo ions by using a 200 keV heavy ion accelerator. The samples were investigated by Raman spectra. The results showed an exponential decrease of intensity for 1469 cm-1 line depending on the kind of ions and dose. There appeared a structural transformation of C60 to amorphous carbon at certain doses, which is correlated to the nuclear energy transfer. H ions implantation resulted in an asymmetrical broadening of 1469 cm-1 line, which is due to the electronic energy transfer.

     

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