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用磁控溅射方法制备了VO2热致变色薄膜.用X射线衍射、X射线光电子谱和原子力显微镜对薄膜的宏观及微观结构进行了分析,表明VO2薄膜纯度高、相结构单一、结晶度好.薄膜的光透过率在2000nm处相变前后改变了42%,高/低温电阻率变化达到三个数量级以上.薄膜的光透过谱和相变过程中电学性质变化的研究与结构分析结果相一致.VO2 thermochromic thin films have been deposited by using the magnetron sputtering method. Both macro, micro and electronic structures of the films have been characterized by X-ray diffraction,X-ray photoelectron spectroscopy and atomic force microscopy. The results show that the films have high purity, monophase and excellent polycrystallinity, which are coincident with the optical and electrical properties.







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