Hg loss of B+-implanted HgCdTe with and without a ZnS film under rapid thermal annealing(RTA) has been analysed by secondary ion mass spectroscopy and Auger electron spectroscopy in detail- The temperatures for RTA are 300, 350 and 400℃, and the duration is 10s- The thickness of ZnS film is 160nm- Results obtained show that the surface layer of HgCdTe with a ZnS film does not show Hg loss after RTA (300℃,10s)- The procedure of RTA for B+-implanted HgCdTe forming N+-P junction has been optimized- It was shown that RTA carried out after the lithography of the metal electrode can improve the junction characteristics-