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中国物理学会期刊

GaAs/AlGaAs异质结中二维电子气子能带的Landau能级耦合

CSTR: 32037.14.aps.47.494

RESONANT SUBBAND-LANDAU-LEVEL COUPLING FOR HIGH-LYING SUBBANDS OF TWO-DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION

CSTR: 32037.14.aps.47.494
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  • 采用栅压比谱技术,在相对较低的磁场下,观察到GaAs/AlGaAs异质结中二维电子气第零子能带的N=1 Landau能级与高达第五子能带的N=0 Landau能级的共振耦合现象,由此精确测量了各子能带能量间距,并与自洽的理论计算结果相比较.同时,讨论了共振子能带-Landau能级耦合所引起的Landau能级分裂大小与子能带量子数的关系.

     

    The resonant subband-Landau-level coupling(RSLC) between the N=1 Landau level of the lowest subband and the N=0 Landau level of the subbands with quantum index up to i=5 of two-dimensional electron gases in GaAs/AlGaAs heterojunction was observed under relatively low magnetic field.Several intersubband energies were accurately determined. The experimental results were in good agreement with the self-consistent calculations including the depolarization shift and exciton-like effect corrections.The quantum index dependence of the level splitting due to the RSLC was discussed.

     

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