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中国物理学会期刊

一维半导体高聚物中的激子态和发光性质及局部晶格畸变所产生的影响——Lancos严格对角化方法

CSTR: 32037.14.aps.48.1138

EXCITON STATES AND LUMINESCENT PROPERTIES IN ONE-DIMENSIONAL SEMICONDUCTOR POLYMER AND THE EFFECT OF LATTICE DISTORTION

CSTR: 32037.14.aps.48.1138
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  • 应用Lanczos严格对角化方法在具有电子-电子强关联效应的情况下,研究一维高聚物半导体中激子态的能量和波函数的物性,并以此为基础计算了在有局部晶格畸变时激子态的变化及其对发光性质的影响.并发现在一定的互作用参数下,其发光强度与畸变的强度成正比关系.

     

    We use Lanczos exact diagonalization method to analyze the energy and the wave functions of exciton states in one-dimensional semiconductor polymer with electron-electron interactions. On the basis of this we further calculate the effect of the local lattice distortion on the exciton states and luminescent properties and find that the efficiency of luminescence is proportional to the strength of local lattice distortion under special electron-electron interaction parameters.

     

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