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(113)面硅衬底上自组织生长的GeSi量子点及其光荧光

物理学报, 1999, 48(9): 1745-1750.
DOI: 10.7498/aps.48.1745
CSTR: 32037.14.aps.48.1745

MORPHOLOGY AND PHOTOLUMINESCENCE OF GeSi SELF-ASSEMBLED QUANTUM DOT ON Si(113)

Acta Phys. Sin., 1999, 48(9): 1745-1750.
DOI: 10.7498/aps.48.1745
CSTR: 32037.14.aps.48.1745
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  • 摘要

    用透射电子显微镜观察了Si(113)衬底上由固态源分子束外延生长的自组织量子点的形貌，测量了其原生及退火后低温下的光荧光谱.对所得结果进行了分析.

     

    Abstract

    Morphology of self-assembled GeSi quantum dot grown on Si(113) by Si molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy.Photoluminescence from the as-grown sample and annealed sample was studied.The res

     

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