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用溶胶-凝胶方法制备Tb3+掺杂的硅基发光材料

物理学报, 1999, 48(9): 1773-1780.
DOI: 10.7498/aps.48.1773
CSTR: 32037.14.aps.48.1773

PREPARATION OF Tb3+-ION-DOPED Si-BASED LIGHT-EMITTING MATERIALS WITH SOL-GEL METHOD

Acta Phys. Sin., 1999, 48(9): 1773-1780.
DOI: 10.7498/aps.48.1773
CSTR: 32037.14.aps.48.1773
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  • 摘要

    报道了用溶胶-凝胶方法制备Tb3+掺杂的硅基发光材料.并用荧光光谱、傅里叶变换红外光谱、原子力显微镜、差热分析和热重测定等方法研究了材料的制备规律.实验结果表明该制备方法在500℃的退火条件下即可以使Tb3+掺杂到硅基发光材料产生室温下的545nm荧光；稀土离子的掺杂浓度可任意调节，最佳浓度为5×1019/cm3；薄膜在微米量级上有较好的平整度.用该方法在改善材料的掺杂浓度、发光性能及降低材料的退火温度方面有特殊的优越

     

    Abstract

    By sol-gel process and appropriate heat treatment,Tb3+-doped light-emitting films were prepared on the silicon bases.The structural changes of the xerogels and the fluorescence properties of the Tb3+ ions doped were studied by photol

     

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