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中国物理学会期刊

Sn离子注入PbTe的热电性能和结构

CSTR: 32037.14.aps.48.2334

THERMOELECTRIC PROPERTIES AND STRUCTURE OF Sn-IMPLANTED LEAD TELLURIDE

CSTR: 32037.14.aps.48.2334
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  • 对碲化铅(PbTe)在室温下进行了Sn离子注入(200keV,6×1016和1×1017ion/cm2).应用电学和热学测量、X射线衍射技术(XRD)和X射线光电子能谱(XPS)研究了Sn离子注入PbTe的热电性能和注入层结构.

     

    In this paper, it is reported that the Sn ions (200keV, 6×1016 and 1×1017ion/cm2) were implanted at room temperature into specimens of lead telluride. By making use of electric and thermal measurements, X-ray diffraction and X-ray photoelectron spectroscopy, we have studied the effects of implantation on the thermoelectric properties and the structure of implanted layer of lead telluride.

     

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