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中国物理学会期刊

C3N4/TiN交替复合膜的微结构研究

CSTR: 32037.14.aps.48.904

STUDY OF THE MICROSTRUCTURE OF ALTERNATING C3N4 In CNx/TiN COMPOSITE FILMS PREPARED

CSTR: 32037.14.aps.48.904
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  • 采用双阴极封闭型非平衡磁场dc反应磁控溅射离子镀制备C3N4/TiN复合交替膜,用X射线光电子能谱法分析了薄膜的组成,测量了薄膜的X射线衍射谱和氮化碳的透射电子衍射图像.氮化碳经氮化钛的强迫晶化作用,生成了β-C3N4和c-C3N4.

     

    We prepared alternating CNx/TiN composite films using a dc magnetron sputtering system in which a closed unbalanced magnetic field was adopted and a negatively biased grating was placed in front of each substrate. The composition of the thin film was analyzed by X-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the CNx films deposited at grating voltages lower than 400V are amorphous. β-C3N4 and subic-C3N4(c-C3N4) were formed at higher voltages. A high grating voltage is indispensable for synthesis of c-C3N4. The lattice constants of C3N4 evaluated from the experimental data agree well with reported theoretical values.

     

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