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中国物理学会期刊

正常金属-d波超导隧道结中杂质和界面散射对微分电导的影响

CSTR: 32037.14.aps.48.926

IMPURITIES AND INTERFACE SCATTERING EFFECT ON THE DIFFERENTIAL CONDUCTANCE NORMAL METAL-d-WAVE SUPERCONDUCTOR JUNCTIONS

CSTR: 32037.14.aps.48.926
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  • 考虑到正常金属区域的杂质散射和界面粗糙的散射,运用Bogoliubov-de Gennes (BdG)方程和Bolonder-Tinkham-Klapwijk(BTK)理论模型,计算正常金属-d波超导隧道结的微分电导.计算发现:隧道谱强烈地依赖电子的入射角和超导体晶轴方位,并能展示零偏压电导峰的存在;此外,杂质散射能使隧道谱的凹陷分裂出两个小凹陷,而界面粗糙能抹平和压低零偏压电导峰和能隙电导峰.这些结果都将很好地解释高Tc超导隧道谱的实验现象.

     

    Taking into account the impurities and rough interface scattering, using Bogoliubov-de Gennes (BdG) equations and Bolonedr-Tinkham-Klapwijk (BTK) model, we calculate the differential conductance of normal metal-d-wave superconductor. It is found that the tunneling spectum depends strongly on both the incident angle electrons and the crystalline axis orientation of superconductor, and exhibits the zero-bias conductance peak under suitable arrangements. Morevover, the zero-bias conductance dip can be splitted into two small conductance dips by the impurities scattering, the tunnel conductance peak at the energy gap and the zero-bias conductance are suppressed and smoothed by the interface roughnes. Our result can explain many experimental measurements on the tunneling spectum of high-Tc superconductors.

     

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