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用慢正电子技术研究了在溅射时不加偏压,衬底加热300℃,纯Ar气氛下制备的用Y2O3稳定的ZrO2薄膜材料(简称YSZ薄膜),发现了YSZ薄膜在不同 深度处的缺陷分布情况,退火温度对YSZ薄膜缺陷有影响.简要讨论了致密、优质YSZ薄膜的 制备方法.
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关键词:
- 慢正电子束 /
- ZrO2(Y2O3)薄膜 /
- 表面缺陷
The ZrO2(Y2O3) thin film materials are studed b y slow positron beam.The ZrO2(Y2O3) thin film m aterials are made by r f puttering without biasing,heat treatment of liner being at 300℃ in pure Ar atmosphere.We discovered that the defects distribute themse lves in different depths of the thin film.The tempearture influences the distril ution of defects in the YSZ thin films.And we discuss briefly the method to make dense and high-quality YSZ films.-
Keywords:
- slow positron beam /
- ZrO2(Y2O3) thin film /
- surfa ce defects







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