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中国物理学会期刊

高密度磁记录用La-Zn替代锶铁氧体薄膜

CSTR: 32037.14.aps.49.1595

LA-Zn DOPED SrM FERRITE FOR HIGH-DENSITY MAGNETIC RECORDING

CSTR: 32037.14.aps.49.1595
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  • 用射频溅射装置制备了La-Zn替代磁铅石型锶铁氧体(SrM)薄膜(LaxSr1-xZnxFe12-xO19,0≤x≤0.4),通过对样品微结构及磁性的研究,发现替代可以有效控制薄膜中晶粒的生长,合适的替代量(x=0.4)可得到平均尺寸大约为12nm的六角片状晶粒.饱和磁化强度Ms随替代量x的增加出现极大值,而矫顽力Hc则呈上升趋势.同时替代使薄膜室温下的

     

    La-Zn doped M type Sr-ferrite thin films with various doping concentration were prepared by conventional rf diode sputtering. La-Zn doping reduces the grain growth rate, so that fine grains with mean grain size about 12nm were prepared with superior magnetic properties. It is found that suitable amount of La-Zn substitution may increase the Ms of the films, and modify the tempareture coefficient of coercivity, while Hc increases with increasing concentration of La-Zn.

     

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