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中国物理学会期刊

Pb(Zr,Sn,Ti)O3反铁电陶瓷场诱相变性能的改进

CSTR: 32037.14.aps.49.1852

ELECTRIC FIELD INDUCED ANTIFERROELECTRIC TO FERROELECTRIC PHASE TRANSITION OF Pb (Zr,Sn,Ti)O3 CERAMICS AND TAILORING OF PROPERTIES THROUGH COMPOSITION MODIFICATION

CSTR: 32037.14.aps.49.1852
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  • 为了获得场诱反铁电(AFEt)—铁电(FER)相变临界电场Ef小、电滞ΔE小、场致应变x适当的反铁电陶瓷,对Pb(Zr, Sn, Ti)O3采用Ba 2+置换Pb2+,同时在四方反铁电相AFEt—三方铁电F ER相界附近调节Ti/Sn比,来控制FER-AFEt,AFEt 

    In order to obtain a new kind of antiferroelectric (AFEt) ceramics wi th lower AFEt-Ferroelectric (FER) switching field Ef and less hysterisis loss ΔE for application of large displacement actuato r, Ba2+ ionics was employed to control the relative stability between AFEt, FER, and parroelelctrics (PEc) phases in (Pb097-xBaxLa002)(Zr055Sn035Ti01)O3 (0≤x≤02) system. Structural chan ges and electric properties as a function of Barium content x have been investig ated by X-Ray diffraction, dielectric properties, polarization and longitudinal strain measurement. It is observed that AFEt changes to FER, and finally to ferroelectric relaxors(RFE) as Ba content x increases from zer o to 02. Based upon these expermental result, we are able to tailor the AFE-FE switching parameters such as Ef, ΔE and AFEt operating t emperature range ΔT through modifying the Ti/Sn ratio near AFEt/FER phase boundary in the (Pb087Ba01La00 2)(Zr06TiySn04-y)O3 (004 ≤y≤009) system. Finally, a new kind of AFEt ceramics with Ef =16kV/mm,ΔE=085kK/mm, and longitudinal strain x=01%—02% which is appropriate for application of digital actuators has been obtained. Phase dia gram with composition located near AFEt/FER boundary of t he studied system has been determined.

     

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