搜索

x
中国物理学会期刊

掺镧PbWO4闪烁晶体的缺陷研究

CSTR: 32037.14.aps.49.2007
CSTR: 32037.14.aps.49.2007
PDF
导出引用
  • 利用正电子湮没寿命谱(PAT)和X射线电子能谱(XPS)研究了掺镧所引起的PbWO4 晶体缺陷的变化.结果表明:掺镧后,PbWO4晶体中的正电子捕获中心铅空位(VPb)浓度增加,并进一步诱导低价氧浓度的增加.讨论了掺La的作用机制,认为掺 La将抑制晶体中的氧空位,增加铅空位浓度.

     

    The changes of defects in PbWO4 crystal caused by La dopant have been studied by means of positron annihilation lifetime and X-ray photoelectron spec trum (XPS).The results show that La dopant enhance the concentration of lead vac ancy (VPb) which can be described as the positron capture center in PbWO4 crystal,and lead vacancy will furthermore introduce low-valent oxygen center.We discuss the mechanism of La doped in PbWO4,and consi der that oxygen vacancy is restrained by doping of La,while lead vacancy density is increased by La dopant.

     

    目录

    /

    返回文章
    返回