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中国物理学会期刊

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

CSTR: 32037.14.aps.49.2290

EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

CSTR: 32037.14.aps.49.2290
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  • 用磁控溅射方法制备了两个具有不同Fe层厚度的[Ni80Co20(L)/Fe(tFe)]N多层膜系列样品,其中tFe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni80Co20层厚度L的变化关系.在退火态[Ni80Co20(L)/Fe(0.1nm)]N系列样品中,发现各向异性磁电阻(

     

    The magnetic and transport properties of two series of sputtered [Ni80Co20(L)/Fe(tFe)]N multilayers (MLs) with different Fe layer thickness of tFe=0.1 and 2nm, and varying L were studied and compared with each other. An enhanced anisotropic magnetoresistance (AMR) peak around L=10nm was observed for annealed films with tFe=0.1nm. The position of the enhanced AMR peak is the same as that of transversal MR peak for the deposited MLs with tFe=2nm. For the as-deposited films with impurity Fe layers, when L becomes lower than the electron mean free path of Ni80Co20 alloy, the zero-field resistivity ρ increases with decreasing L and the increase of ρ will exceed that of AMR (Δρ). The L dependence of ρ can be described by Fuchs-Sondheimer theory. The coercivity Hc of the as-deposited films with tFe=0.1nm increases rapidly with increasing L for L<15nm and is almost saturated for L>15nm. The dependence of Hc on L may be related to the interface structure of MLs, which is indicated by a big drop of Hc in the annealed films. Our experimental data show that the interface scattering in MLs may increase AMR; the magnetic alloy interfacial layers in MLs may change the domain structure and enhance transverse MR and AMR.

     

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