Carbon films were deposited by mass-selected ion beam technique with ion energies 50—200eV at a substrate temperature from room temperature to 800℃. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600℃,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800℃. They were perpendicular to the surface and parallel to each other. Preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.